半導体ワークピースを処理するためのプラズマリアクタ

Japanese Patent JP4902941

B2

A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

Hoffman Daniel Jay
In Gerard Zeyao
Ye Yang
Katz Dan
Butch Burger Douglas A Junior
Zao Xiao Ye
Cian Kang-Lee
Hagen robert bee
Mirror matthew el

JP2003555872A

March 21, 2012

September 25, 2002

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APPLIED MATERIALS,INCORPORATED

H05H1/46; C23C16/509; H01J37/32; H01L21/205; H01L21/3065

JP10050663A
JP7273096A
JP5299382A
JP63029520A
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JP11297496A
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JP10134953A
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JP6151373A
JP64024829U
JP11185998A
JP8124862A
JP4000901A

WO2001071765A1

Sadao Kumakura
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima

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