To provide a batch type plasma treatment device which can perform treatment while keeping a heating temperature on the surface of each body to be treated and between bodies to be treated treated uniform.

In a batch type plasma treatment device for treating a plurality of boards W to be treated at once by putting a treatment boat 2, whereon a plurality of treated boards W such as semiconductor wafers are mounted inside a treatment chamber, a heating wire heater 8 for heating each treated board W is laid in a treated body mounting part 2a of the treatment body boat 2. Since each treated board W can be directly heated from a lower surface by the wire heater 8, treatment is possible while keeping a heating temperature on a surface of a each treated board W and between treated boards W uniform regardless of a position on the treated body boat 2, etc. It is applicable to a batch type plasma etching device, a plasma chemical vapor deposition device, etc.