Title:
PLASMA TREATMENT
Document Type and Number:
Japanese Patent JPS5621329
Kind Code:
A
Abstract:
PURPOSE:To enhance the treatment efficiency and eliminate the etching nonuniformity, by placing the main worked face of a wafer perpendicularly to the flow of the plasma gas and shielding the unworked face of the wafer. CONSTITUTION:Si wafers are arranged on a flat plte 21 so that worked faces 10a, 10a' of the wafers are exposed and extend perpendicularly to the flow of the plasma gas and the unworked faces of the wafers are in tight contact with the table of the flat plate 21. Since the unworked faces of the wafers are shielded from the plasma gas flow and this flow perpendicularly collides against the worked faces, the treatment efficiency is greatly increased and the etching nonuniformity is eliminated. A means for preventing the etching of the unworked faces is not needed. No damage etching is caused.
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Inventors:
OKANO JIYUNICHI
TANAKA KATSUHISA
TANAKA KATSUHISA
Application Number:
JP9670079A
Publication Date:
February 27, 1981
Filing Date:
July 31, 1979
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H01L21/205