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Title:
PLASMON RESONANCE TYPE PHOTOELECTRIC CONVERSION ELEMENT MANUFACTURING METHOD, AND PLASMON RESONANCE TYPE PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
Japanese Patent JP2012038541
Kind Code:
A
Abstract:

To provide a method of manufacturing a plasmon resonance type photoelectric conversion element, by which the corrosion of metal microparticles which absorb light by plasmon and their elution into an electrolytic solution can be suppressed.

The manufacturing a plasmon resonance type photoelectric conversion element including an anode electrode having a transparent electrode layer, a metal microparticle layer, a semiconductor thin film made of n-type semiconductor, and a pigment adsorption layer, which are stacked on a transparent substrate in turn, a cathode electrode opposed to the cathode electrode, and an electrolyte disposed between the electrodes and including oxidation-reduction species comprises the steps of: forming the metal microparticle layer on the transparent electrode layer formed on the transparent substrate; and forming the semiconductor thin film by coating the metal microparticle layer heated to a given temperature with a fine particle fluid dispersion of the n-type semiconductor or a precursor solution of the fine particle by a spray method, and evaporating the solvent of the fluid dispersion in a very short time or thermally decomposing the precursor.


Inventors:
TATSUMA TORU
TAKAHASHI YUKINA
Application Number:
JP2010177028A
Publication Date:
February 23, 2012
Filing Date:
August 06, 2010
Export Citation:
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Assignee:
ASAHI GLASS CO LTD
International Classes:
H01M14/00; H01L31/04
Domestic Patent References:
JP2009071147A2009-04-02
JP2001035551A2001-02-09
JP2009533878A2009-09-17
JP2002100793A2002-04-05
Foreign References:
WO2005027587A12005-03-24
Attorney, Agent or Firm:
Patent Business Corporation Sakura International Patent Office



 
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