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Title:
POSITIVE PHOTORESIST HAVING ENHANCED RESOLUTION AND REDUCED CRYSTALLIZATION TENDENCY, AND NEW TETRA(HYDROXYPHENYL)ALKANE
Document Type and Number:
Japanese Patent JP3236942
Kind Code:
B2
Abstract:

PURPOSE: To increase photosensitivity and/or developing rate by incorporating an alkali-soluble resin, photosensitive quinonediazide, specified aromatic hydroxy compd. and additive modifying agent into an org. solvent.
CONSTITUTION: This resist is prepared by incorporating at least one kind of alkali-soluble resin, one kind of photosensitive quinonediazide and one kind of aromatic hydroxy compd. expressed by formula which enhances the photosensitivity and/or developing rate, and if necessary, an additive modifying agent usually used, into an org. solvent. In formula, R is a hydrogen atom, alkyl group of 1 to 4 carbon atoms, 1 to 4C alkoxy group, -OCH2C6H5 group, -OC6H5 group or -COO, 1 to 4C alkyl group, R1 and R2 are independently hydrogen atoms, 1 to 4C alkyl groups, -C6H5 groups or alicyclic five or six-member rings, (a) is an integer 0 to 4, and (m) and (n) are independently 0, 1 or 2.


Inventors:
Reinhard Schultz
Norbert munzel
Martin Ross
Wilhelm Knoproch
Application Number:
JP25583792A
Publication Date:
December 10, 2001
Filing Date:
August 31, 1992
Export Citation:
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Assignee:
Olin Microelectronic Chemicals, Inc.
International Classes:
C07C39/15; C07C309/71; C07C309/76; C08K5/42; G03F7/004; C08L101/00; G03F7/022; G03F7/22; H01L21/027; H05K3/00; (IPC1-7): G03F7/004; G03F7/022; H01L21/027; H05K3/00
Domestic Patent References:
JP412356A
JP412357A
JP5303199A
JP5303200A
Other References:
【文献】欧州特許出願公開416544(EP,A2)
Attorney, Agent or Firm:
Nobuo Kaida (2 outside)