Title:
PNP TRANSISTOR
Document Type and Number:
Japanese Patent JPS52178
Kind Code:
A
Abstract:
PURPOSE: To enhance voltage-resisting and reliability of PNP transistor by exposing the intermediate between N-layer of the base thereof and P-layer of the collector thereof.
Inventors:
AZUMA TAKASHI
MEGURO SATOSHI
NAGASAWA KOUICHI
MEGURO SATOSHI
NAGASAWA KOUICHI
Application Number:
JP7556775A
Publication Date:
January 05, 1977
Filing Date:
June 23, 1975
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/73; H01L21/283; H01L21/31; H01L21/331; H01L29/08; (IPC1-7): H01L21/31; H01L29/08
Next Patent: JPH052179