Title:
POLISHING LIQUID FOR CMP
Document Type and Number:
Japanese Patent JP2015035517
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP which makes possible to reduce the occurrence of polishing flaw in a face to be polished without lowering a polishing speed, and to achieve an excellent polishing selectivity in connection with a silicon oxide and a silicon nitride.SOLUTION: A polishing liquid for CMP comprises: polishing material particles; at least one water-soluble organic compound having at least one of -COOH group, -COOMgroup (where Mis an atom or functional group which can be substituted with a H atom to form a salt), -SOH group and -SOMgroup (where Mis an atom or functional group which can be substituted with a H atom to form a salt); and water. The polishing material particles each have a core-shell structure including a core layer and a shell layer. The core layer contains an oxide of at least one element selected from Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th and alkali-earth metals. The shell layer contains a cerium oxide.
Inventors:
OKUYAMA OKUSHI
GOAN KAZUYOSHI
FUJITA MICHIYO
FUJIEDA YOICHI
GOAN KAZUYOSHI
FUJITA MICHIYO
FUJIEDA YOICHI
Application Number:
JP2013166011A
Publication Date:
February 19, 2015
Filing Date:
August 09, 2013
Export Citation:
Assignee:
KONICA MINOLTA INC
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Attorney, Agent or Firm:
Patent business corporation Mitsuaki international patent firm
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