To provide a polishing method and a polishing composition, for polishing a silicon wafer in high flatness as double-side mirror surfaces.
A double-side polishing device polishes both surfaces of a polishing object, while supplying the polishing composition composed of silicon oxide particles dispersed in water, by rotating at least one of upper-lower surface plates and the polishing object, while sandwiching and bringing the polishing object into pressure contact between the upper-lower surface plates stuck with polishing cloth. A double-side polishing method performs polishing while supplying an aqueous polishing composition of setting the concentration of the silicon oxide particles to 2 wt.% or less to the whole polishing composition and indicating high electric conductivity and alkalinity, by using hard polishing cloth and a polishing object holding carrier arranged in substantially the same thickness as the thickness being a target of the polishing object.
NAGAYAMA HITOSHI
JPH11302634A | 1999-11-02 | |||
JP2001358095A | 2001-12-26 | |||
JP2002254299A | 2002-09-10 | |||
JP2002178255A | 2002-06-25 | |||
JP2004154919A | 2004-06-03 | |||
JP2003297777A | 2003-10-17 | |||
JP2001093866A | 2001-04-06 | |||
JP2000158329A | 2000-06-13 | |||
JP2001138225A | 2001-05-22 |
Eishiro Higuchi
Harumi Miyamoto