Title:
POLISHING METHOD WITH CHEMICAL MACHINE FOR ALUMINUM OR ALUMINUM ALLOY
Document Type and Number:
Japanese Patent JP3118195
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method to remove aluminum from a semiconductor wafer through chemical machine polishing and remain a wiring pattern thereon.
SOLUTION: A surface of aluminum in water environment is formed of an aluminum oxide hydrate and when the surface makes contact with silica hydrate particles of polishing slurry at neutral pH, alumina on the surface is carried to a silica surface through formation of aluminosilicate and alumina is removed togetherwith an alumina layer through contact chemical reaction. A so polished wafer has an insulation substance surface on which an aluminum wire substantially freed from scratch and corrosion is formed.
Inventors:
Maria Roney
Application Number:
JP29856796A
Publication Date:
December 18, 2000
Filing Date:
November 11, 1996
Export Citation:
Assignee:
International Business Machines Corporation
International Classes:
B24B37/00; H01L21/321; H01L21/304; (IPC1-7): H01L21/304; B24B37/00
Domestic Patent References:
| JP7221168A | ||||
| JP4313224A | ||||
| JP7221059A | ||||
| JP5845861A | ||||
| JP7164307A | ||||
| JP62199352A | ||||
| JP2185365A | ||||
| JP7288243A |
Other References:
【文献】米国特許4944836(US,A)
【文献】米国特許5328553(US,A)
【文献】米国特許5328553(US,A)
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)