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Title:
研磨パッドおよびこれを用いた半導体素子の製造方法
Document Type and Number:
Japanese Patent JP7291986
Kind Code:
B2
Abstract:
The present invention relates to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to an embodiment can achieve low hardness by comprising a polishing layer formed using a curing agent of specific components. It is possible to enhance the mechanical properties of the polishing pad, as well as to improve the surface defects appearing on the surface of a semiconductor substrate, by controlling the surface roughness reduction rate and the recovery elasticity index of the polishing pad to specific ranges. It is also possible to further enhance the polishing rate.

Inventors:
Yoon, Jong Wook
John, Unson
Seo, Jangwon
Ho, Haeyoung
Application Number:
JP2022082432A
Publication Date:
June 16, 2023
Filing Date:
May 19, 2022
Export Citation:
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Assignee:
SK enpulse Co.,Ltd.
International Classes:
H01L21/304; B24B37/24; C08K5/18; C08L75/04
Domestic Patent References:
JP202179541A
JP2018168384A
JP202170154A
JP201497567A
JP2015208854A
Foreign References:
WO2018021428A1
US20190168356
KR102237326B1
US20210138605
Attorney, Agent or Firm:
SK Patent Attorney Corporation
Akihiko Okuno
Hiroyuki Ito