To restrict the scattering of the abrasive from a polishing pad in a chemical machine polishing device.

In the disk-like polishing pad to be arranged on a rotary board to polish a wafer W pushed from over, a polishing surface 11 is formed with grid-like grooves 12 extended toward the peripheral edge 11a and at least one annular groove 13 extended in the circumferential direction outside of the grid- like grooves 12. With this structure, the annular groove 13 works as a dam to temporarily dam the abrasive for storage, and quantity of the abrasive to be directly scattered outside from the outer peripheral edge 11a of the polishing pad 10 can be restricted. As a result, polishing speed is stabilized, and polishing is uniformly performed, and consumption of the abrasive can be reduced.