Title:
半導体基板の研磨
Document Type and Number:
Japanese Patent JP4000059
Kind Code:
B2
Abstract:
According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition farther comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silicon dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.
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Inventors:
Luo, Chulian
Yeah, Chanchi
Block, kelly h
Yeah, Chanchi
Block, kelly h
Application Number:
JP2002556923A
Publication Date:
October 31, 2007
Filing Date:
January 09, 2002
Export Citation:
Assignee:
Rohm and Haas Electronic Materials CMP Housings, Inc.
International Classes:
B24B37/00; H01L21/304; C09G1/02; C09K3/14; H01L21/321
Domestic Patent References:
| JP4063428A |
Foreign References:
| WO1999064527A1 | ||||
| US4867757 | ||||
| EP0373501A2 | ||||
| WO1996038262A1 | ||||
| EP0846740A1 | ||||
| WO2000024842A1 | ||||
| WO2001032794A1 | ||||
| WO2001041973A2 | ||||
| EP1152046A1 |
Attorney, Agent or Firm:
Hajime Tsukuni
Fumio Shinoda
Fumio Shinoda