Title:
POLISHING SOLUTION AND POLISHING METHOD
Document Type and Number:
Japanese Patent JP2004031443
Kind Code:
A
Abstract:
To provide a polishing solution which is capable of reducing an etching rate sufficiently as keeping a preferable polishing rate, restraining the occurrence of dishing and a dry area from occurring in the surface of a copper, and forming a very reliable buried pattern composed of a metal film.
The polishing solution contains an oxidant, a metal oxide dissolving agent, a metal anticorrosive agent, and water, and has an etching rate of 1.0 nm/minute or below at a temperature of 25°C.
Inventors:
MASUDA KATSUYUKI
ONO YUTAKA
KURATA YASUSHI
ONO YUTAKA
KURATA YASUSHI
Application Number:
JP2002181992A
Publication Date:
January 29, 2004
Filing Date:
June 21, 2002
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
B24B37/00; C09K3/14; H01L21/304; (IPC1-7): H01L21/304; B24B37/00; C09K3/14
Attorney, Agent or Firm:
Hidekazu Miyoshi
Yasuo Miyoshi
Iwa Saki Kokuni
Akira Kurihara
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Yasuo Miyoshi
Iwa Saki Kokuni
Akira Kurihara
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
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