Title:
POLYCRYSTALLINE SILICON FILM VAPOR PHASE FORMATION METHOD AND APPARATUS BY PULSE POWER SUPPLY AND PULSE DISCHARGE SPUTTERING
Document Type and Number:
Japanese Patent JP3878874
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a polycrystalline silicon film vapor phase synthesis method that is capable of stable discharge by high-pressure gas by a simple apparatus without using silane gas, and to provide a polycrystalline silicon film vapor phase synthesis apparatus and a pulse power supply used for it.
SOLUTION: The polycrystalline silicon film vapor phase formation apparatus comprises a DC power supply, an intelligent power module for interrupting an output, a pulse transmitter, a high-voltage transformer, a resistor, and a diode for discharging a voltage from the high-voltage side of the high-voltage transformer. The apparatus interrupts a current at the low-voltage side of the high-voltage transformer, and generates a high voltage required for discharge at a high-voltage side. Then, pulse discharge is made by a gas pressure of 1 Torr or higher by a pulse power supply (1) for restraining a rapid increase in current for causing arc discharge by utilizing a transition phenomenon due to the large inductance of a transistor and a resistor that is inserted into a circuit, thus performing sputtering by pulse discharge and the vapor phase synthesis of the polycrystalline silicon film by the pulse discharge.
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Inventors:
Mikio Noda
Application Number:
JP2002089943A
Publication Date:
February 07, 2007
Filing Date:
March 27, 2002
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01L21/203; H05H1/24; C23C14/40; (IPC1-7): H01L21/203; C23C14/40; H05H1/24
Domestic Patent References:
| JP2001210800A | ||||
| JP2001060553A | ||||
| JP9170079A |
Attorney, Agent or Firm:
Toshio Nishizawa