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Title:
半導体材料用シリコンの多結晶シリコン塊
Document Type and Number:
Japanese Patent JP5427330
Kind Code:
B2
Abstract:
A cleaning method cleans silicon for semiconductor materials using pure water treated by a reverse osmosis treatment and by ion exchange treatment and reduces the aluminum and iron remaining on the silicon surface.

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Inventors:
Keitake Ota
Application Number:
JP2012138783A
Publication Date:
February 26, 2014
Filing Date:
June 20, 2012
Export Citation:
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Assignee:
Mitsubishi Materials Corporation
Mitsubishi Polycrystalline Silicon America Corporation
International Classes:
C01B33/02; B08B3/04; C02F1/42; C02F1/44; C30B29/06; H01L21/304
Domestic Patent References:
JP2000302594A
JP5004811A
JP6144822A
Foreign References:
WO1997044277A1
Attorney, Agent or Firm:
Hiroshi Chiba



 
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