Title:
POLYCRYSTALLINE THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2001210825
Kind Code:
A
Abstract:
To enhance the current drive capability of a polycrystalline thin-film transistor in the transistor.
A critical path, having a high electrical conductivity between a source region and a drain region in comparison with that of other critical paths, exists in a polycrystalline semiconductor film. A defect in an MOS interface, the number of crystal grain boundaries and defects in the crystal grain boundaries in the critical path are reduced.
Inventors:
KIMURA MUTSUMI
Application Number:
JP2000020822A
Publication Date:
August 03, 2001
Filing Date:
January 28, 2000
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/336
Attorney, Agent or Firm:
Kisaburo Suzuki (2 outside)
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