Title:
POLYMER COMPOUND, CHEMICAL AMPLIFICATION RESIST MATERIAL AND METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP3861966
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a resist material responsive to a high-energy ray, having excellent sensitivity, resolution and oxygen plasma etching resistance at a wavelength of ≤200 nm, especially ≤170 nm, consequently the resist material capable of being made into a resist material having a slight absorption especially at an exposure wavelength of F2 excimer laser due to these characteristics, readily forming a pattern which is fine and yet vertical to a substrate, therefore suitable as a fine pattern forming material for producing a very large scale integration.
SOLUTION: This a polymer compound is characterized in that a main chain contains a fluorinated acrylic derivative of the following general formula (1) (R1, R2 and R3 are each a hydrogen atom, a fluorine atom, a 1-20C straight- chain, branched chain or cyclic alkyl group or fluorinated alkyl group and at least one of R1, R2 and R3 contains a fluorine atom; R4 is a silicon-containing containing at least one silicon atom) as a repeating unit.
Inventors:
Jun Hatakeyama
Jun Watanabe
Yuji Harada
Jun Watanabe
Yuji Harada
Application Number:
JP2000037403A
Publication Date:
December 27, 2006
Filing Date:
February 16, 2000
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C08F30/08; H01L21/027; G03F7/039; G03F7/075; (IPC1-7): C08F30/08; G03F7/039; G03F7/075; H01L21/027
Domestic Patent References:
| JP2250888A | ||||
| JP63095207A | ||||
| JP6228231A | ||||
| JP3217845A |
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yuko Nishikawa
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