To obtain a polymer compound which exhibits a high etching resistance when used for a photoresist.
This polymer compound contains at least one kind of monomer unit selected from monomer units represented by formulas (Ia)-(Ig) [wherein Ra is H or methyl; R1 and R2 are each H or a 1-5C hydrocarbon group; R3 is an optionally substituted tertiary hydrocarbon group; R4 is H, a 1-20C hydrocarbon group, hydroxyl, etc.; A is a single bond, methylene, ethylene, etc.; L is an optionally substituted 5-membered or higher lactone ring; X is an optionally substituted divalent alicyclic group; Y, Y1, and Y2 are each an optionally substituted monovalent alicyclic group (with the proviso that n is 0, then Y in formula (Ic) excludes an optionally substituted adamantyl group); m is 0 or 1; and n, n1, and n2 are each 0, 1 or 2].
INOUE KEIZO
FUNAKI KATSUNORI
NAKANO TATSUYA
HORAI AKIRA
JPH10312060A | 1998-11-24 | |||
JP2002372784A | 2002-12-26 | |||
JPH06322180A | 1994-11-22 |