Title:
POLYMER COMPOUND, RESIST MATERIAL AND METHOD OF PATTERN FORMATION
Document Type and Number:
Japanese Patent JP3856122
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a resist material that is sensitive to high-energy rays and has high sensitivity at a wavelength of ≤200 nm, particularly at a wavelength of ≤170 nm, further of which the base polymer is a fluorine-containing resin of carboxylic acid ester pendant type and has excellent transparency, high resolution and resistance to plasma etching properties.
SOLUTION: The polymer compound contains recurring units represented by general formula (1a) and general formula (1b (wherein R1 is F, an alkyl or a fluorinated alkyl; R2a and R2b are each H or -R3-CO2R4 and at least one of R2a and R2b is -R3-CO2R4; R3 is an alkylene or a fluorinated alkylene; R4 is H, an unstable acidic group, an adhesive group or a 1-20C fluorinated alkyl group) and has a weight-average molecular weight of 1,000-500,000.
Inventors:
Yuji Harada
Jun Hatakeyama
Yoshio Kawai
Jun Hatakeyama
Yoshio Kawai
Application Number:
JP2002103576A
Publication Date:
December 13, 2006
Filing Date:
April 05, 2002
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/039; C08F236/20; G03F7/004; (IPC1-7): C08F236/20; G03F7/039
Domestic Patent References:
| JP2003255540A | ||||
| JP2003330196A | ||||
| JP9502429A | ||||
| JP9501193A |
Foreign References:
| WO2002064648A1 | ||||
| WO2002065212A1 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Saori Shigematsu
Katsunari Kobayashi
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