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Title:
POLYMER COMPOUND, RESIST MATERIAL AND METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP3965547
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a resist material sensitive to high-energy rays, excellent in sensitivity, resolution and oxygen plasma etching resistance, especially capable of becoming an excellent material for a two-layer resist and capable of easily forming minute patterns perpendicular to a substrate and therefore suitable as a material for forming minute patterns for producing a very-large-scale integrated(VLSI) circuits.
SOLUTION: This polymer compound comprises a silicon-containing cyclic group represented by the general formula (1) or (2) (wherein R1 to R3, R6, R7 and R10 to R13 are each H or a 1-20C linear, branched or cyclic alkyl group; R4, R5, R8 and R9 are each H, a 1-20C linear, branched or cyclic alkyl group, a fluorinated 1-20C alkyl group or a 6-20C aryl group; and (p), (q), (r) and (s) are each an integer of 0 to 10 with proviso that 1≤p+q+s≤20).


Inventors:
Jun Hatakeyama
Tsuyoshi Kanao
Mutsuko Nakajima
Koji Hasegawa
Application Number:
JP34238099A
Publication Date:
August 29, 2007
Filing Date:
December 01, 1999
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C08F30/08; C08F32/08; G03F7/004; G03F7/039; G03F7/075; (IPC1-7): C08F30/08; G03F7/039; G03F7/075
Domestic Patent References:
JP62172342A
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa