To provide a resist material which is sensitive to a high-energy ray being excellent in sensitivity, resolution and plasma-etching resistance for the wavelength of 200 nm or below, particularly 170 nm or below, and by these characteristics, to provide the resist material which has little absorption for the exposure wavelength particularly of F2 excimer laser, etc., and is suitable as a minute-pattern forming material for manufacturing very LSI because of being capable of forming readily patterns which are minute as well as vertical to the base.
A polymer compound comprises a repeating unit A represented by general formula (1) and a repeating unit B which has an acid-unstable group, (R1 to R4 may be same or different each other, each being a hydrogen atom, a fluorine atom, a chlorine atom or a 1-20C straight-, branched-chain or a cyclic alkyl group or a fluorinated alkyl group, while at least one of R1 to R4 is a fluorinated alkyl group).
HARADA YUJI
WATANABE ATSUSHI
KAWAI YOSHIO
SASAKO MASARU
ENDO MASATAKA
KISHIMURA SHINJI
OTANI MITSUTAKA
MIYAZAWA SATORU
TSUTSUMI KENTARO
MAEDA KAZUHIKO
MATSUSHITA ELECTRIC IND CO LTD
CENTRAL GLASS CO LTD