Title:
POLYMER COMPOUND, RESIST MATERIAL, AND PATTERN FORMATION METHOD
Document Type and Number:
Japanese Patent JP3874061
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a resist material which exhibits a little absorption especially at the exposure wavelength of an F2 excimer laser, can be used as an alkali-developable resist material, can easily form a fine pattern vertical to a substrate board, and hence is suitable as a fine-pattern formation material for producing very-large-scale integrated circuits and to provide a polymer compound useful as the base polymer for such a resist material.
SOLUTION: This polymer compound contains repeating units each represented by formula (1) (wherein at least one of R1 and R2 is F or trifluoromethyl and the rest is H or a 1-20C straight chain, branched, or cyclic alkyl; and R3 and R4 are each H or a 1-20C straight chain, branched, cyclic, or fluorinated alkyl provided they may combine with each other to form a ring) and repeating units each having an acid-unstable group.
Inventors:
Jun Hatakeyama
Jun Watanabe
Yuji Harada
Jun Watanabe
Yuji Harada
Application Number:
JP2000249273A
Publication Date:
January 31, 2007
Filing Date:
August 21, 2000
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C08F234/02; G03F7/004; C08F8/00; C08F212/14; C08F216/12; C08F220/10; C08F222/10; C08F222/40; C08F232/08; C08F234/00; C08K5/00; C08L37/00; G03F7/039; H01L21/027; (IPC1-7): C08F234/00; C08F8/00; G03F7/004; G03F7/039; H01L21/027
Domestic Patent References:
| JP5086139A |
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yoshihiro Nagare
Yuko Nishikawa
Yoshihiro Nagare
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