POLYMER COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD

Japanese Patent JP3912483

B2

PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to a high-energy ray being excellent in sensitivity, resolution and plasma-etching resistance for the wavelength of 200 nm or below, particularly 170 nm or below, and by these characteristics, to provide the resist material which has little absorption for the exposure wavelength particularly of F2 excimer laser, etc., and is suitable as a minute-pattern forming material for manufacturing very LSI because of being capable of forming readily patterns which are minute as well as vertical to the base.
SOLUTION: A polymer compound comprises a repeating unit A represented by general formula (1) and a repeating unit B which has an acid-unstable group, (R1 to R6 may be same or different each other, each being a hydrogen atom, a fluorine atom, a chlorine atom or a 1-20C straight-, branched-chain or a cyclic alkyl group or a fluorinated alkyl group, while at least one of R1 to R6 contain a fluorine atom; a is in the range of 0≤a≤10).

Jun Hatakeyama
Jun Watanabe
Yuji Harada
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda

JP2001266772A

May 09, 2007

September 04, 2001

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Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.

C08F232/00; G03F7/004; C08F220/10; C08F222/40; C08F232/02; C08F234/00; G03F7/039; H01L21/027; (IPC1-7): C08F232/02; C08F220/10; C08F234/00; G03F7/004; G03F7/039; H01L21/027

JP2001330955A
JP2002012623A

Takashi Kojima
Yuko Nishikawa

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