Title:
POLYMER COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3912484
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to a high-energy ray being excellent in sensitivity for the wavelength of 200 nm or below, particularly 170 nm or below, besides in which plasma-etching resistance is improved by introduction of a cyclic alkyl group to a principal chain as well as an excellent resolving property is proved.
SOLUTION: A polymer compound comprises a repeating unit represented by general formula (1) and a repeating unit which has an acid-unstable group, (R1 and R2 are each a hydrogen atom, or a 1-20C straight-, branched-chain or a cyclic alkyl group; R1 and R2 may bond to each other to form a ring, in that case, they are each a 1-20C straight-, branched-chain or a cyclic alkylene group or they form a bond represented by -O-, -S-, or -NH-; j is an integer of 2-4; and k is 0 or 1).
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Inventors:
Yuji Harada
Jun Hatakeyama
Jun Watanabe
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda
Jun Hatakeyama
Jun Watanabe
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda
Application Number:
JP2001266788A
Publication Date:
May 09, 2007
Filing Date:
September 04, 2001
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
International Classes:
C08F232/00; G03F7/039; C08F220/10; C08F222/40; G03F7/004; H01L21/027; (IPC1-7): C08F232/00; C08F220/10; C08F222/40; G03F7/039; H01L21/027
Domestic Patent References:
JP11160877A |
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yuko Nishikawa
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