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Title:
POLYMER COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3912484
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to a high-energy ray being excellent in sensitivity for the wavelength of 200 nm or below, particularly 170 nm or below, besides in which plasma-etching resistance is improved by introduction of a cyclic alkyl group to a principal chain as well as an excellent resolving property is proved.
SOLUTION: A polymer compound comprises a repeating unit represented by general formula (1) and a repeating unit which has an acid-unstable group, (R1 and R2 are each a hydrogen atom, or a 1-20C straight-, branched-chain or a cyclic alkyl group; R1 and R2 may bond to each other to form a ring, in that case, they are each a 1-20C straight-, branched-chain or a cyclic alkylene group or they form a bond represented by -O-, -S-, or -NH-; j is an integer of 2-4; and k is 0 or 1).


Inventors:
Yuji Harada
Jun Hatakeyama
Jun Watanabe
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda
Application Number:
JP2001266788A
Publication Date:
May 09, 2007
Filing Date:
September 04, 2001
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
International Classes:
C08F232/00; G03F7/039; C08F220/10; C08F222/40; G03F7/004; H01L21/027; (IPC1-7): C08F232/00; C08F220/10; C08F222/40; G03F7/039; H01L21/027
Domestic Patent References:
JP11160877A
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa