POLYMER, RESIST MATERIAL AND METHOD FOR FORMING PATTERN

Japanese Patent JP3838329

B2

PROBLEM TO BE SOLVED: To provide a polymer which has excellent oxygen plasma etching resistance and is especially useful as an excellent material for two layer resists.
SOLUTION: This polymer characterized by containing silicon-containing groups represented by the general formula (1) [R1 to R4 are each H, a 1 to 20C linear, branches or cyclic alkyl, or R1 and R2 may be bound each other to form an aliphatic hydrocarbon ring in which CH2 may be substituted by Si(R8)2 (R8 is a 1 to 4C linear or branched alkyl), or R3 and R4 may be bound to each other to form an aliphatic hydrocarbon ring in which CH2 may be substituted by Si(R8)2; R5 to R7 are each a 1 to 20C linear, branched or cyclic alkyl, a 1 to 20C fluorinated alkyl, or a 6 to 20C aryl; (m) is 1 or 2].

WO/2005/014676	POLYMER DISPERSION COMPRISING SILICON COMPOUNDS
JPWO2002053345	Articles having a predetermined surface shape and their manufacturing methods
JP5608474	Admiration active light nature or a radiation-sensitive resin composition, and a pattern formation method using it

Koji Hasegawa
Tsuyoshi Kanao
Takeshi Watanabe
Mutsuko Nakajima
Seiichiro Tachibana
Tsunehiro Nishi
Jun Hatakeyama

JP2000293858A

October 25, 2006

September 27, 2000

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Shin-Etsu Chemical Co., Ltd.

C08F30/08; G03F7/039; C08F32/00; C08F32/08; C08K5/00; C08L43/04; C08L45/00; C08L101/10; G03F7/075; G03F7/40; H01L21/027; G03F7/004; (IPC1-7): C08F30/08; C08F32/00; C08K5/00; C08L101/10; G03F7/039; G03F7/40; H01L21/027

JP60260946A
JP2000221686A
JP2001125272A
JP2001166486A
JP2001278918A
JP2001226432A

WO2000020925A1

Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa

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