POLYMERIC COMPOUND, RESIST MATERIAL AND METHOD FOR FORMING PATTERN

Japanese Patent JP3912516

B2

PROBLEM TO BE SOLVED: To obtain a polymeric compound useful as a base polymer for a resist material suitable for a fine processing technology, especially chemically amplifying resist material, a resist material, and to provide a method for forming a pattern.
SOLUTION: The polymeric compound contains a recurring unit expressed by formulae (1-1) or (1-2) [wherein, R1 to R3 are each H, F, an alkyl or a fluorinated alkyl; R4 is a single bond, an alkylene or a fluorinated alkylene; R5 is a single bond, an alkylene or a fluorinated alkylene; R6 is a single bond, an alkylene or a fluorinated alkylene; R7 is H or an acid-labile group; R8 is a fluorinated alkyl; (a) is 1 or 2; (b) is 0-4 integer; (c) is 0-4 integer; and 1≤a+b+c≤4] and has 1,000-500,000 weight average molecular weight. The resist material is provided by having improved transparency, close adhesion and developing liquid permeability of the resist, at the same time capable of becoming a resist material having an excellent plasma etching resistance, easily forming patterns and suitable as the fine pattern-forming material for producing a super LSI (large scale integration).

Yuji Harada
Jun Hatakeyama
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Kazuhiko Maeda
Mitsutaka Otani
Haruhiko Komoriya

JP2002233194A

May 09, 2007

August 09, 2002

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Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.

C08F28/02; C08F212/14; C08F220/12; C08F232/00; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08F28/02; C08F212/14; C08F220/12; C08F232/00; G03F7/039; H01L21/027

JP2000231194A

Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi

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