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Title:
POLYMERIC COMPOUND, RESIST MATERIAL AND METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP3944724
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a polymeric compound useful as a base polymer for a resist material suitable for a fine processing technology, especially a chemically amplifying resist material, a resist material, and to provide a method for forming a pattern.
SOLUTION: The polymeric compound contains a recurring unit expressed by formula (1) [wherein, R1 to R3 are each H, F, an alkyl or a fluorinated alkyl; R4 is a single bond, an alkylene or a fluorinated alkylene; R5 is a single bond, O, an alkylene or a fluorinated alkylene; R6 is methylene, O or S; R7 to R10 are each H, F, a fluorinated alkyl, R11OR12, R11COOR12 or OR12; R11 is a single bond, an alkylene or a fluorinated alkylene; R12 is H or an acid-labile group; and (a) is 0 or 1] and has 1,000-500,000 weight average molecular weight. The resist material is provided by having improved transparency, close adhesion and developing liquid permeability of the resist, at the same time capable of becoming a resist material having an excellent plasma etching resistance, easily forming patterns and suitable as the fine pattern-forming material for producing a super LSI (large scale integration).


Inventors:
Yuji Harada
Jun Hatakeyama
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Kazuhiko Maeda
Mitsutaka Otani
Haruhiko Komoriya
Application Number:
JP2002233045A
Publication Date:
July 18, 2007
Filing Date:
August 09, 2002
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
International Classes:
C08F28/02; G03F7/039; C08F212/14; C08F220/22; C08F232/00; H01L21/027; (IPC1-7): C08F28/02; C08F212/14; C08F220/22; C08F232/00; G03F7/039; H01L21/027
Domestic Patent References:
JP2004062045A
JP2004062049A
JP2004002725A
Foreign References:
WO2003025675A1
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi