POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE TO FAR ULTRAVIOLET RAY

Japanese Patent JP3797506

B2

PROBLEM TO BE SOLVED: To obtain the positive photoresist composition sufficiently suitable to expose to far ultraviolet rays of specified wavelength, and high in sensitivity to the rays and superior in the pattern profile to be formed and with economic preservation stability by incorporating a specified resin and a compound to be allowed to release an acid by irradiation with radiation and a basic compound low in molecular weight. SOLUTION: This positive photoresist composition comprises the resin having repeating units of a monomer represented by the formula and raisable in solubility in alkali after decomposed by action of an acid, a compound to be allowed to release an acid by irradiation with activated light or radiation, and a basic compound low in molecular weight. In the formula, R1 is an H atom or a methyl group; R2 is an alkyl or cycloalkyl group or R2 may combine with R3 or R4 to form a ring; each of R3 and R4 is, independently, an H atom or an alkyl group but at least one of them is an H atom; A is a simple bond or an alkylene group or the like or a combination of any of them.