Title:
POSITIVE PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2002131911
Kind Code:
A
Abstract:
To provide a positive photoresist composition for exposure with far ultraviolet rays, which has improved line edge roughness and further the excellent resist properties such as sensitivity, resolution, resist shape, focal depth.
The positive photoresist composition contains a compound (A) generating an acid by the irradiation with active ray or radial ray, a resin (B) made to be alkali soluble from insoluble or hardly soluble in alkali by the action of the acid and a nitrogen-containing compound (C) having at least one specific nitrogen-containing partial structure in the molecule.
Inventors:
FUJIMORI TORU
TAN SHIRO
KANNA SHINICHI
TAN SHIRO
KANNA SHINICHI
Application Number:
JP2000325936A
Publication Date:
May 09, 2002
Filing Date:
October 25, 2000
Export Citation:
Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/039; C08K5/00; C08K5/095; C08K5/16; C08L25/18; C08L101/14; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08K5/00; C08K5/095; C08K5/16; C08L25/18; C08L101/14; G03F7/004; H01L21/027
Attorney, Agent or Firm:
Shohei Oguri (4 outside)
Previous Patent: IONIZING RADIATION RESIST COMPOSITION AND METHOD FOR USING THE SAME
Next Patent: JP2002131912
Next Patent: JP2002131912