To provide a chemically amplified resist composition suitable for use of an exposure light source of ≤250 nm, particularly F2 excimer laser light (157 nm), and to more specifically provide a chemically amplified resist composition excellent in sensitivity and dissolution contrast when using a light source of 157 nm and improved in development defects and density distribution dependency, and a pattern forming method using the same.
The positive resist composition contains (A) a resin which has fluorine atoms and is decomposed by the action of an acid to increase solubility in an alkaline developer and (B) a compound which generates an acid upon irradiation with actinic rays or radiation, wherein the compound (B) has a group which is decomposed by the action of an acid (acid decomposable group).
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada
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