To provide a positive resist composition having a wide exposure latitude, from which a good profile can be formed not only by normal exposure but by immersion exposure, and to provide a pattern forming method using the composition.
The positive resist composition contains: (A) a resin having a specified repeating unit having a cycloalkyl group in a side chain, the solubility of the resin with an alkali developing solution increased by an action of an acid, by 50 to 99.7 mass% with respect to the whole solid content of the positive resist composition; (B) a compound generating an acid by irradiation with active rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent. The resin (C) is at least one of: a resin containing at least one of a fluorine atom and a silicon atom and having an alicyclic structure; and a resin that contains a repeating unit having at least one of a fluorine atom and a silicon atom in a side chain and contains a repeating unit having an unsubstituted alkyl group in a side chain. The pattern forming method is carried out by using the composition.
KANNA SHINICHI
JP2005134456A | 2005-05-26 | |||
JPH08202038A | 1996-08-09 | |||
JP2000221686A | 2000-08-11 |
WO2004076535A1 | 2004-09-10 |
Kiyozumi Yazawa
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