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Title:
POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
Document Type and Number:
Japanese Patent JP2011085954
Kind Code:
A
Abstract:

To provide a positive resist composition having a wide exposure latitude, from which a good profile can be formed not only by normal exposure but by immersion exposure, and to provide a pattern forming method using the composition.

The positive resist composition contains: (A) a resin having a specified repeating unit having a cycloalkyl group in a side chain, the solubility of the resin with an alkali developing solution increased by an action of an acid, by 50 to 99.7 mass% with respect to the whole solid content of the positive resist composition; (B) a compound generating an acid by irradiation with active rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent. The resin (C) is at least one of: a resin containing at least one of a fluorine atom and a silicon atom and having an alicyclic structure; and a resin that contains a repeating unit having at least one of a fluorine atom and a silicon atom in a side chain and contains a repeating unit having an unsubstituted alkyl group in a side chain. The pattern forming method is carried out by using the composition.


Inventors:
KANDA HIROMI
KANNA SHINICHI
Application Number:
JP2010291383A
Publication Date:
April 28, 2011
Filing Date:
December 27, 2010
Export Citation:
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Assignee:
FUJIFILM CORP
International Classes:
G03F7/039; G03F7/004; G03F7/033; H01L21/027
Domestic Patent References:
JP2005134456A2005-05-26
JPH08202038A1996-08-09
JP2000221686A2000-08-11
Foreign References:
WO2004076535A12004-09-10
Attorney, Agent or Firm:
Takeshi Takamatsu
Kiyozumi Yazawa