To provide a positive resist composition suitable for use of an exposure light source of light of ≤160 nm, in particular, of F2 excimer laser light (of 157 nm), and practically having sufficient transparency when a light source of 157 nm is used and having little dependence on developing time.
The positive resist composition contains (A) a fluorine-containing resin having a structure with a fluorine atom substituted in the main chain and/or a side chain of the polymer skeleton and having a group which is decomposed by the effect of an acid and increases solubility with an alkali developer and (B) a compound which produces an aromatic sulfonic acid substituted with a group having at least one fluorine atom by the effect of active light or radiation.
MIZUTANI KAZUYOSHI
SASAKI TOMOYA
