POSITIVE RESIST COMPOSITION

Japanese Patent JP2004361579

A

To provide a positive resist composition suitable for use under an exposure light source of ≤300 nm, particularly F2 excimer laser light (157 nm), and to specifically provide a positive resist composition which exhibits satisfactory transmittance when the light source of 157 nm is used and ensures little line edge roughness, few development defects, and little scum.

The positive resist composition contains (A) a resin having a specified repeating unit derived from a vinyl ether having a fluorine atom or a fluoroalkyl group in the α-position and having solubility in an alkali developer increased by the action of an acid and (B) a compound which generates an acid upon irradiation with an active ray or radiation.

JP5687442	Photoacid generator and photoresist containing it
JP7220229	Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
JP4452599	Positive resist composition and pattern formation method using it

KANDA HIROMI
MIZUTANI KAZUYOSHI

JP2003158305A

December 24, 2004

June 03, 2003

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FUJI PHOTO FILM CO LTD

G03F7/039; C08F216/14; C08F220/24; C08F232/00; H01L21/027; (IPC1-7): G03F7/039; C08F216/14; C08F220/24; C08F232/00; H01L21/027

Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada

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