Title:
POSITIVE TYPE PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2002303981
Kind Code:
A
Abstract:
To provide a positive type photoresist composition for exposure with far UV having high resolving power, good fitness for a halftone phase shift mask (side lobe light resistance) and lowered density dependency.
The positive type photoresist composition contains (A) a compound which generates an acid when irradiated with active light or radiation, (B) two polymers each having specified repeating units each having a group which is decomposed by the action of the acid and (C) an acid diffusion inhibitor.
Inventors:
UENISHI KAZUYA
SATO KENICHIRO
AOSO TOSHIAKI
SATO KENICHIRO
AOSO TOSHIAKI
Application Number:
JP2001108727A
Publication Date:
October 18, 2002
Filing Date:
April 06, 2001
Export Citation:
Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/039; C08F220/10; C08F222/06; C08F232/08; H01L21/027; (IPC1-7): G03F7/039; C08F220/10; C08F222/06; C08F232/08; H01L21/027
Attorney, Agent or Firm:
Shohei Oguri (4 outside)