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Title:
POSITIVE TYPE PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP3444844
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which ensures improved line edge roughness and suppressed occurrence of development defects in the production of a semiconductor device.
SOLUTION: The positive type photoresist composition contains a resin containing specified repeating structural units and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and a compound which generates the acid when irradiated with active light or radiation.


Inventors:
Kenichiro Sato
Application Number:
JP2000215574A
Publication Date:
September 08, 2003
Filing Date:
July 17, 2000
Export Citation:
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Assignee:
Fuji Photo Film Co., Ltd.
International Classes:
G03F7/039; C08F16/12; C08F16/36; C08F20/10; C08F28/04; C08F32/00; C08K5/00; C08K5/16; C08L45/00; C08L101/00; H01L21/027; (IPC1-7): G03F7/039; H01L21/027
Domestic Patent References:
JP11305444A
JP2000159758A
JP200026446A
JP2001188346A
JP2001240625A
JP2002116546A
JP2002296783A
JP2001142213A
JP2002131917A
Attorney, Agent or Firm:
Shohei Oguri (4 outside)