Title:
特定の硫黄含有化合物および糖アルコールまたはポリカルボン酸を含む、ポスト化学機械研磨（ポストＣＭＰ）洗浄組成物
Document Type and Number:
Japanese Patent JP6577526
Kind Code:
B2
Abstract:
A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising:
(A) is cysteine, glutathione, N-acetylcysteine, thiourea,
(L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water,
wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.
Inventors:
Lee, Yuchuo
Venkatalaman, Siamese Sundal
Chung, Minchie
Venkatalaman, Siamese Sundal
Chung, Minchie
Application Number:
JP2017117450A
Publication Date:
September 18, 2019
Filing Date:
June 15, 2017
Export Citation:
Assignee:
BASF SE
International Classes:
C11D7/34; C11D3/20; C11D3/34; C11D3/37; C11D7/22; C11D7/26; H01L21/304
Domestic Patent References:
| JP2007027382A | ||||
| JP2009071165A | ||||
| JP2011507236A | ||||
| JP2010153790A | ||||
| JP2009194049A | ||||
| JP2007526647A | ||||
| JP2011040722A |
Foreign References:
| WO2010048139A2 |
Attorney, Agent or Firm:
Satoshi Eto