Title:
Power module semiconductor device
Document Type and Number:
Japanese Patent JP6148830
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a power module semiconductor device capable of eliminating a wiring pillar, downsizing, and weight saving of a thin SiC power module.SOLUTION: A power module semiconductor device comprises: a ceramic substrate 10; a first pattern D(K4) of a first Cu plate layer 10a arranged on a surface of the ceramic substrate 10; a first semiconductor device Q4 arranged on the first pattern D(K4); a first source pad electrode SP arranged on the first semiconductor device Q4; a first insulating film 60 arranged around the first source pad electrode SP on the first semiconductor device Q4 and having a film thickness thicker than that of the first source pad electrode SP; and a first top plate electrode 22 arranged on the first insulating film 60 and the first source pad electrode SP.
More Like This:
Inventors:
Toshio Hanada
Application Number:
JP2012160170A
Publication Date:
June 14, 2017
Filing Date:
July 19, 2012
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L25/07; H01L21/60; H01L25/18
Domestic Patent References:
| JP2007311441A | ||||
| JP2010287726A | ||||
| JP2004022960A | ||||
| JP2002076256A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Keishin Terayama
Hiroyuki Miyoshi
Keishin Terayama
Hiroyuki Miyoshi