パワー半導体装置およびそれを用いた電力変換装置

Title:

パワー半導体装置およびそれを用いた電力変換装置

Document Type and Number:

Japanese Patent JP6771447

Kind Code:

B2

Abstract:

An object is to suppress a decrease in reliability due to peeling of an insulating layer and another member of a power semiconductor device. A power semiconductor device according to the present invention includes: a power semiconductor element; a conductor portion that transmits a current to the power semiconductor element; an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged; a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer; and an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion, the insulating layer having an insulating portion and a conductor layer sandwiched between the conductor portion and the metallic heat dissipating portion via the insulating portion.

Inventors:

Junpei Kusugawa
Tadahiko Senda

Application Number:

JP2017189405A

Publication Date:

October 21, 2020

Filing Date:

September 29, 2017

Export Citation:

Click for automatic bibliography generation Help