Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3887741
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make junction temperatures nearly equal based on difference in cooling effect, and to increase current capacity as a whole in a power semiconductor device that fixes a plurality of semiconductor devices onto a radiation substrate for connecting in parallel.
SOLUTION: This power semiconductor device fixes the plurality of semiconductor devices that accommodate bipolar transistors and field effect transistors Q1 to Qn into a package onto the radiation substrate, has a main control circuit MC that connects the plurality of semiconductors in parallel and at the same time detects current for controlling a sharing current, and circulates cooling air to the radiation substrate for cooling the semiconductor device. In this case, resistance values Rs1 to Rsn for detecting the current of each semiconductor device are set so that the amount of the current that is allowed to flow to the semiconductor device positioned at the suction side of the cooling air is larger than that of the current that is allowed to flow to the semiconductor device positioned at the exhaust side of the cooling air in order along the circulation direction of the cooling air of the semiconductor device fixed onto the radiation substrate.
Inventors:
Ihara civilization
Yoshihisa Kaji
Yoshihisa Kaji
Application Number:
JP2000311435A
Publication Date:
February 28, 2007
Filing Date:
October 12, 2000
Export Citation:
Assignee:
Fujitsu Access Limited
International Classes:
H01L25/07; H05K7/20; G05F1/56; H01L23/467; H01L25/10; H01L25/18; H02M1/00; (IPC1-7): H01L25/10; H01L25/18; G05F1/56; H05K7/20; //H02M1/00
Domestic Patent References:
| JP10023768A | ||||
| JP10256766A |
Attorney, Agent or Firm:
Manabe Kiyoshi
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito