PURPOSE: To attain a high output, a broad band and miniaturization by adopting such a constitution that plural FETs with a comparatively narrow gate width are arranged in parallel in place of a FET having a wide gate width required to obtain a desired output.
CONSTITUTION: Two high frequency amplifier sections composed respectively of a FET 1a (2a), a transmission line 12a (12b) and a FET 1b (2b) are arranged in parallel in the system. A multi-branching circuit 17 to distribute a microwave to each high frequency amplifier section in phase and with the same amplitude and an input matching circuit 6 consisting of transmission lines 15a, 15b and capacitive elements 16a, 16b for impedance conversion are provided on the input side of the high frequency amplifier sections, a multi-branching circuit 20 synthesizing the outputs of the high frequency amplifier sections in phase with the same amplitude and an output matching circuit 11 consisting of transmission lines 18a, 18b and capacitive elements 19a, 19b for impedance conversion are provided on the output side of the high frequency amplifier sections respectively. Thus, a power synthesis multi-stage amplifier with small size is realized, in which broad band processing and high output processing are implemented.
TAKAGI SUNAO
TOYOSHIMA HAJIME
URASAKI SHUJI
| JP55053316B | ||||
| JPH01280908A | 1989-11-13 | |||
| JPS63253708A | 1988-10-20 | |||
| JPS6011519B2 | 1985-03-26 |
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