Title:
PREPARATION OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS5572042
Kind Code:
A
Abstract:
PURPOSE:To obtain a highly precise pattern in silk screen printing, by forming a fluoric acid resistive metal thin film on a SiO2 film coated on an Si base with an electroless plating method. CONSTITUTION:An Au thin film 5 is plated on a Si base plate 1, whereon a pn- junction is formed by an electroless plating method, and further a pattern is set on by a silk screen printing using a fluoric acid resistive ink, and then a patterning is achieved by an ink 6. In this method, as the affinity of ink to the SiO2 surface is improved by the Au film, a highly precise printing pattern is obtained. Also Ni and Ag instead of Au can be used. Furthermore, the SiO2 film on which a patterning was made by an ordinary method is locally removed by a solution containing fluoric acid and nitric acid as a main component, to separate the semiconductor element 4. By so doing, the affinity of ink to the SiO2 surface is improved, and also the precise pattenr being mearly photochemical printing is obtained.
Inventors:
KAMIKAWA TAKASHI
Application Number:
JP14748678A
Publication Date:
May 30, 1980
Filing Date:
November 25, 1978
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Domestic Patent References:
| JPS5185378A | 1976-07-26 | |||
| JPS513579A | 1976-01-13 |