Title:
PREPARING APPARATUS OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS57200286
Kind Code:
A
Abstract:
PURPOSE:To make the diameter of a pulled up single crystal uniform, by increasing or reducing the temperature of a raw material melt automatically according to the change in the weight of the pulled up single crystal and the number of revolutions of a separator in pulling up the single crystal of a compound semiconductor having a high decomposition pressure. CONSTITUTION:A single crystal 7 of a semiconductor having a high decomposition pressure, e.g. GaP or GaAs, is pulled up from a melt 2 thereof, and the surface of the melt 2 is covered with an inert liquid 3, e.g. B2O3. A separator 4 is floated between the melt 2 and the liquid 3. The single crystal 7 is pulled up through the central window of the separator 4 while heating a quartz crucible 1 with a heater 6. In this case, supporting pins 10 are rotated on the pulling up axis 8 of the single crystal 7 with the rotation of the separator 4, and the number of revolutions and the rate of change are observed and measured by a TV camera 12. The temperature of the melt 2 by a thermocouple and the change in the weight of the pulled up single crystal 7 are respectively sensed, computed and processed to control the calorific value of the heater 6 by the resultant signals and make it possible to pull up the single crystal 7 having a constant diameter always.
Inventors:
KOJIMA MASAKATSU
NAKASHIMA MASAHIRO
WATANABE MASAYUKI
NAKASHIMA MASAHIRO
WATANABE MASAYUKI
Application Number:
JP8595981A
Publication Date:
December 08, 1982
Filing Date:
June 04, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C30B15/26; C30B15/20; (IPC1-7): C30B15/20