To provide a pressure sensor which decreases an offset voltage and can lessen a temperature dependency of a sensitivity.

A substrate of single crystal silicon is processed from a rear face thereof by anisotropic etching with the use of an aqueous solution of potassium hydroxide (KOH) or the like, thereby forming a thin part at a central part of the substrate. A diaphragm 1a is obtained in this manner. A strain gauge is formed on the diaphragm 1a, whereby a silicon chip 1 is manufactured. A surface where a pressure introduction hole 2a of a silicon pedestal 2 is formed is bonded to the silicon chip 1 by a silicone adhesive 4, and the other face of the silicon pedestal 2 is bonded by the silicone adhesive 4 to a face where a pressure introduction hole 3a of a package 3 is formed. Since the pedestal is formed of the same material as that of the silicone chip 1, the base and the silicon chip has the same thermal expansion coefficient. Accordingly, a strain of the silicon chip 1 due to a temperature change is restricted. Moreover, owing to the bonding by means of the silicone adhesive 4, an offset voltage resulting from the strain at the bonding time is reduced.