Title:
PROBER FOR ELECTRIC MEASUREMENT AND MEASURING METHOD FOR ELECTRIC CHARACTERISTIC BY THE PROBER
Document Type and Number:
Japanese Patent JP3735701
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To analyze and evaluate a fine-structure semiconductor device by a method wherein a sharp probe is electrically brought precisely into contact with every part of the fine-structure semiconductor device and its electric characteristic is measured directly.
SOLUTION: In this prober for electric measurement and this measuring method for an electric characteristic by the prober, a sharp probe 1 scans the surface of a semiconductor device at a distance generating a tunnel current phenomenon, a position near the surface is measured and recorded, the sharp probe 1 is positioned in a position based on data on the recorded position near the surface, the probe 1 is lowered toward the semiconductor device until an abnormal rise current is detected, a current and a voltage which flow in the sharp probe 1 are measured, and the electric characteristic of the fine semiconductor device is measured. Instead of measuring the position near the surface of the semiconductor device by using the tunnel current phenomenon, the position near the surface can be measured by using an atomic force, a temperature or light.
Inventors:
Kazuki Miki
Application Number:
JP9371699A
Publication Date:
January 18, 2006
Filing Date:
March 31, 1999
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
G01R1/06; G01N37/00; G01R31/28; G01Q10/04; G01Q60/10; G01Q60/16; G01Q60/24; G01Q70/12; G01R1/067; G01R29/12; G01R29/14; H01L21/66; (IPC1-7): G01R31/28; G01N13/12; G01R1/06; G01R29/12; G01R29/14; H01L21/66
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