To deposit a planarized metal film by employing a metal deposited by hot physical vapor deposition on a dielectric surface on which a conductive material is deposited unevenly.

A dielectric layer 12 is formed on a conductive layer 14 and etched to make an opening for interconnecting the conductive layers before forming a metal interconnection 22. A physical vapor deposition(PVD) At layer 30 is then deposited on a region 26 including a deposit or a nodule of a conductive metal. When the conductive metal deposit or nodule is aluminum, a PVD layer 30 is composed of aluminum deposited at substrate temperature preferably higher than about 150°C, more preferably higher than about 250°C and most preferably higher than about 300°C. The PVD Al layer 30 preferably contains at least a trace of copper. Finally, a TiN antireflection coating is applied by PVD onto the surface 32 of the CVD/PVD Al mixture layer.