Title:
PROCESS FOR FABRICATING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2003347592
Kind Code:
A
Abstract:
To convert a nitride semiconductor doped with p-type impurities into a low resistance p-type nitride semiconductor layer.
After a gallium nitride based compound semiconductor layer doped with p-type impurities is grown in a reaction container by vapor phase epitaxial growth, annealing is performed in an atmosphere substantially containing no hydrogen while keeping a specified temperature level in the reaction container thus converting the gallium nitride based compound semiconductor doped with p-type impurities into a p-type gallium nitride based compound semiconductor layer.
Inventors:
NAKAMURA SHUJI
IWASA SHIGETO
IWASA SHIGETO
Application Number:
JP2003171428A
Publication Date:
December 05, 2003
Filing Date:
December 24, 1991
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L21/205; H01L33/32; (IPC1-7): H01L33/00; H01L21/205
Attorney, Agent or Firm:
Toyosu Yasuhiro (1 person outside)