PROCESS FOR GROWING MULTI-COMPONENT SEMICONDUCTOR SINGLE CRYSTAL AND ELECTRIC FURNACE USED THEREFOR

Japanese Patent JPS60260491

A

PURPOSE:To obtain the titled single crystal of superior quality contg. no cracks, no holes, and no deposited matters by sealing a mixture of materials having a specified compositional ratio corresponding to a crystal in a quartz ampule, melting, mixing the content of the amplue in an electric furnace with a heater having a uniform temp. distribution, and maintaining the melted product, after quenching, at a recrystallisation temp. with a heater having a specified temp. gradient to cause recrystallisation. CONSTITUTION:A mixture of materials for the crystal weighed to result a specified compositional ratio (e.g. Hg0.8Cd0.2Te) are sealed in an evacuated quartz ampule 2, which is charged to an electric furnace. The temp. of the electric furnace is elevated to a slightly higher temp. than the melting point of the mixture by activating a heater 7 for melting the material for prepg. the crystal to melt the materials 1. Then, the set temp. of the electric furnace is lowered straightly to below the freezing point of the mixture and the temp. is measured by a monitoring thermocouple 3. A heater 5 for recrystallisation heat treatment is set to maintain the above-described temp. and the heater 5 is activated while the heater 7 is suspended. After executing heat treatment, the temp. of the furnace is lowered to room temp. Thus, a single crystal consisting of Hg0.8Cd0.2Te is obtd.

FUJINO YOSHIO

JP11608084A

December 23, 1985

June 06, 1984

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NIPPON ELECTRIC CO

C30B11/00; C30B33/00; (IPC1-7): C30B11/00; H01L21/365

Uchihara Shin

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