Title:
PROCESS FOR GROWING SINGLE CRYSTAL OF SEMICONDUCTIVE COMPOUND
Document Type and Number:
Japanese Patent JPS5268297
Kind Code:
A
Abstract:
A method of forming and growing a single crystal of a semiconductor compound comprising a Group II-VI or Group III-V compound is disclosed. The method comprises placing a single crystal seed of the semiconductor compound adjacent to a first reactant comprising a Group II or Group III element. A protective blanket, resulting from at least a second reactant of a Group VI or Group V element, is formed over the seed within a temperature zone to protect the seed from dissolution by the first reactant. The reactants are combined to form a melt at a first temperature within the temperature zone and to grow a single crystal from the melt on the seed at a second temperature within the temperature zone.
Inventors:
WILLIAM ANDREW GAULT (US)
Application Number:
JP12925876A
Publication Date:
June 06, 1977
Filing Date:
October 27, 1976
Export Citation:
Assignee:
WESTERN ELECTRIC CO (US)
International Classes:
C08G18/00; C08G18/48; C08G18/50; C08G65/00; C08G65/32; C30B11/00; C30B11/06; C30B11/14; C30B27/00; C30B29/40; C30B29/48; (IPC1-7): C08G18/48; C08G18/52; C08G65/32; C08G75/06