Title:
３Ｃ－ＳｉＣ膜を調製するためのプロセス
Document Type and Number:
Japanese Patent JP7146946
Kind Code:
B2
Abstract:
SiC-CVD films, in particular, fine grained 3C-SiC thick films are prepared by hybrid laser CVD, and a process for preparing the same. The process for preparing a SiC-CVD film comprises irradiating an infrared laser beam and an ultraviolet laser beam on the substrate, wherein the deposition temperature is maintained at 1523 to 1623 K in the chamber. The obtained SiC-CVD film, preferably a fine grained 3C-SiC film, has an average grain size of 0.5 to 5 m, and an improved micro-hardness, which is expressed by Vickers micro-hardness (H v), at 1623 K and an applied load of 300 g, of up to 35 GPa.
Inventors:
Han Myung-wook
▲トゥ▼ 溶
Volume
Takashi Goto
▲トゥ▼ 溶
Volume
Takashi Goto
Application Number:
JP2020559484A
Publication Date:
October 04, 2022
Filing Date:
May 31, 2018
Export Citation:
Assignee:
IBIDEN CO.,LTD.
Wuhan University of Technology
Takashi Goto
Wuhan University of Technology
Takashi Goto
International Classes:
C23C16/42; C23C16/46; C23C16/48
Domestic Patent References:
| JP60206445A | ||||
| JP1147071A | ||||
| JP2194176A | ||||
| JP10226599A | ||||
| JP2015517203A |
Other References:
Youfeng Lai et al.,Fine-grained 3C-SiC thick films prepared via hybrid laser chemical vapor deposition,Journal of the American Ceramic Society,2019年,DOI: 10.1111/jace.16445
Attorney, Agent or Firm:
Patent business corporation glory patent office