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Title:
PROCESSING UNIT OF SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPH05159896
Kind Code:
A
Abstract:

PURPOSE: To improve the extent of μ-wave absorbing efficiency by installing an exciting coil group on an outer circumference at the front end of a plasma generating chamber and also an auxiliary exciting coil on an outer circumference in the intermediate part, respectively.

CONSTITUTION: A reactant gas is sealed in a plasma generating chamber 2, inducting a μ wave P, and direct currents are fed to a exciting coil 3 and an auxiliary exciting coil 10. The vicinity of an inlet port 5 turns to a high magnetic field through the coil group 3, so lowering along the incident direction. ECR plasma is produced in the chamber 2 at a position passed through an area where ECR conditions are satisfied, and a magnetic field once lowered from the ECR conditions is set down to the high magnetic field again by means of the auxiliary coil. At this time also, the ECR plasma is produced in a corresponding position passing through an inner part of the chamber 2. In consequence, the extent of the inducted μ wave is improved and, what is more, plasma density increases too.


Inventors:
OKURA EIICHIRO
TOYODA MASATO
ODERA HIROKI
Application Number:
JP7891891A
Publication Date:
June 25, 1993
Filing Date:
April 11, 1991
Export Citation:
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Assignee:
RYODEN SEMICONDUCTOR SYST ENG
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/302; H01L21/3065; H01L21/31; H05H1/46; (IPC1-7): H01L21/302; H01L21/31; H05H1/46
Domestic Patent References:
JPS63213344A1988-09-06
Attorney, Agent or Firm:
Masuo Oiwa
Masuo Oiwa (2 outside)